Abstract
An oxide semiconductor field-effect transistor (OSFET) using c-axis-aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO) exhibits extremely low off-state current (Ioff) and can be fabricated at a low process temperature that is 400°C or lower. The features indicate that the CAAC-IGZO FET is suitable for a monolithic stacking process and application to artificial intelligence (AI). This paper shows electric characteristics of the CAAC-IGZO FET and their factors.
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