Abstract
We present an overview of the performances of FDSOI CMOS transistors down to deep cryogenic temperature, highlighting in particular the benefits brought by the back bias. FDSOI transistors are operational from room temperature down to temperature as low as 100mK. The main DC electrical characteristics, as well as variability properties and reliability are measured and analyzed. We also point out specific behaviors appearing at cryogenic temperature, and discuss their physical origin and modeling.
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