Abstract
Emerging 3D transistor structures and continued scaling requires conformal metal gate options with low resistivity, band edge work function and improved barrier properties. Doping ALD TiN with Si improves barrier properties shown with 10X reduced gate leakage. Both valence and conduction band edge work function can be met with low resistivity conformal films. The combination of ALD TiN, CVD Co and CVD Al can be used for low resistivity replacement metal gate fill for sub-15nm trenches.
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