Abstract
Emerging 3D transistor structures and continued scaling requires conformal metal gate options with low resistivity, band edge work function and improved barrier properties. Doping ALD TiN with Si improves barrier properties shown with 10X reduced gate leakage. Both valence and conduction band edge work function can be met with low resistivity conformal films. The combination of ALD TiN, CVD Co and CVD Al can be used for low resistivity replacement metal gate fill for sub-15nm trenches.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.