Abstract
Toward fast formation of TSV for 3D-IC or 3D-LSI, a composite with polypyrrole as a conducting polymer and metal silver prepared through the solution photo chemistry was studied with respect to filling status of vertical holes in silicon chip, electrical characteristics and interfacial structures between the filling composite and silicon substrate. Based on the experimental results, the composite was capable of filling within 10 minutes, evaluation procedures of electrical resistance were established and excellent barrier layer was found.
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