Abstract
The optical absorption coefficients of high-quality 2-inch AlN substrates grown by physical vapor transport (PVT) were accurately calculated from transmittance and absolute reflectance measurements in the ultraviolet-visible (UV-Vis) range. Spatially uniform UV absorption coefficients of 13-23 cm-1 at 4.68 eV (265 nm) were demonstrated. This approach also provided accurate values for the reflection coefficients, allowing a determination of the complex refractive index and relative permittivity, which showed good agreement with previous reports. Values for the high-frequency and static permittivities obtained in this study were 4.22 and 7.84, respectively. The data specific to PVT AlN substrates obtained using this method are useful in the design of electronic and optoelectronic devices grown on these substrates.
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