(Invited) Characterization of ALD in Semiconductor Device Fabrication

Abstract

The CMOS industry continues to push the boundaries of what is possible. Indeed, today’s manufacturing can be described as atomic level engineering, with an example lying in the use of Atomic Layer Deposition (ALD). The development and fabrication (fundamental R&D through to manufacturing) of highly repeatable structures required by the semiconductor industry also necessitates the use of state-of-the-art materials characterization (“if you can’t see it, you can’t develop it”) and process control capabilities (“if you can’t see it, you can’t control it”). This talk will cover the more commonly used materials characterization capabilities used within the industry. This includes, but not limited to: Transmission Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy. Following this, the use of Secondary Ion Mass Spectrometry (SIMS) in the form of Self Focusing SIMS (SF-SIMS), in area selective ALD R&D will be demonstrated.