Abstract
We studied effect of smooth surface roughness of RuO2 bottom electrode on electrical characteristics for metal-insulator-metal capacitors with TiO2/Al2O3/TiO2 (TAT) insulator. The RuO2 bottom electrode was deposited on ionic Al2O3 buffer layer by plasma-enhanced atomic layer deposition. The capacitance equivalent thickness (CET) value of TiN/TAT/TiN capacitor abnormally increased in high frequency region, while no CET change in RuO2/TAT/RuO2 capacitor. Furthermore, the RuO2/TAT/RuO2 capacitor with pure TiO2 insulator had a high dielectric constant value (about 50) compared to other High-k films in the same process temperature at 600°C. The RuO2/TAT/RuO2 capacitors had a low enough leakage current density (on the order of ~10-8 A/cm2), unlike TiN/TAT/TiN capacitors. During conductive-atomic force microscopy measurement, TiN/TAT/TiN capacitor exhibited several leakage points at over 8V, while no observation in the RuO2/TAT/RuO2 capacitors. This good performance of the RuO2/TAT/RuO2 capacitor is due to the smoother surface of RuO2 bottom electrode than TiN bottom electrode.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
