Abstract
In this paper we present the electrical characteristics of Metal/Al2O3/In0.53Ga0.47As/InP MOS capacitor (MOSCAP) structures formed using a relatively straightforward capacitor process flow and for MOSCAPs which experience the full process flow of an In0.53Ga0.47As n channel MOSFET. From analysis of the capacitance-voltage response over a range of ac signal frequencies fixed oxide charge densities and interface state concentrations are determined for the MOSCAP structures and the impact of forming gas annealing on oxide and interface state densities is presented. The MOSCAP results are compared to the properties of fully processed metal/Al2O3/In0.53Ga0.47As/InP n channel MOSFETs, and the results indicate that the findings from the MOSCAPS do translate to the measured InGaAs MOSFET characteristics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
