(Invited) Bottom-up Electrodeposition

Abstract

Superconformal electrodeposition that enables the fabrication of high aspect ratio Cu interconnects is not unique to copper (or for that matter even to electrodeposition). I will detail two known mechanisms underlying such processes: Curvature Enhanced Accelerator Coverage (CEAC) and S-shaped Negative Differential Resistance (S-NDR). I will describe how voltammetric measurements on planar substrates can quantify kinetics for models based on both mechanisms, enabling accurate, a-priori prediction of filling from a given electrolyte in features of various size and aspect ratio. I will summarize the chemistries and associated mechanisms for superconformal Ag, Au, Co, and Ni deposition for fabrication of defect-free nanometer scale damascene to millimeter scale through silicon via interconnects, including model predictions. I will finish by detailing truly bottom-up Au filling of high aspect trenches.