Abstract
High-performance Si devices are approaching their physical boundaries during the continuous miniaturization following Moore's Law. New semiconductor materials are in urgent necessity, among which, carbon nanotubes（CNTs）are suggested by the International Technology Roadmap for Semiconductors（ITRS）as potential candidate to continue Moore's Law due to its quasi-one-dimensional structure and excellent electrical properties.To unleash the advantages of CNTs in the post-Moore era, optimizing materials morphology, interfaces composition, and integrated structure proves to be pivotal, which constitutes the basic idea of our research. Regarding material morphology, we have fabricated evenly spaced parallel CNT materials with a spacing down to 10nm, by employing the DNA-directed high-precision assembly method. At CNT interface, we have realized fast on/off switching high-performance switches by engineering the interfacial compositions. Individual CNT displays 1G0 conductance with subthreshold swing superior to conventional Si transistors. Furthermore, we built the preliminary foundation to integrate CNT transistors into multi-dimensional circuits. Based on the control of material, interface, and integration structure, our work elucidates the potential of constructing energy-efficient computing circuit using carbon nanotube electronics.
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