Abstract
Next generation display and photovoltaic devices are moved toward flexibility which needs low temperature process. However most of synthesis (or deposition) methods hardly avoid high temperature process, especially for crystalline structured thin films. A novel deposition process for nano-crystal embedded polymorphous silicon (nc-embedded pm-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBaCVD). Experimental results of the NBaCVD process show superior electrical properties and light soaking stability in nano-crystal silicon even the deposition temperature was below 80 {degree sign}C. The energetic neutral particles enhance doping efficiency (σ = 1.14 S/cm) and crystalline phase (up to 80%) in nc-embedded pm-Si thin films without additional substrate heating. The light soaking stability of nc-Si embedded pm-Si shows very strong tolerance.
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