Abstract
With the application of Ultra low-k dielectric material in the advanced nodes, more and more challenges are elevated on barrier CMP. High removal rates of TEOS and barrier films are required to enable an effective removal, while tunable Cu RR and low ULK RR are needed to control the topography and stop in ULK layer. The k value shift of polished ULK also should be minimized. In this paper, we will report a barrier slurry for this application including slurry additives effect on removal rate selectivity, topography and k value. The corrosion control capability is also evaluated by soaking test. Through slurry formulation tuning, an optimal topography with good within wafer and within die non-uniformity are obtained. The control capability in removal rate and selectivity, k value shift of polished ULK, topography, and Cu corrosion were demonstrated.
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