Abstract
Effective work function (EWF) changes of TiN/HfO2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obtained by allowing aluminum to migrate to the TiN/HfO2 interface during a forming gas anneal. High EWFs (5.1 eV) are achieved with anneals that incorporate oxygen throughout the TiN with [O] = 2.8x1021 cm-3 near the TiN/HfO2 interface. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2 interface cause the formation of dipoles that increase the EWF.
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