Abstract
We demonstrate enhanced four-wave mixing (FWM) in doped silica waveguides integrated with graphene oxide (GO) layers. Owing to strong mode overlap between the integrated waveguides and GO films that have a high Kerr nonlinearity and low loss, the FWM efficiency of the hybrid integrated waveguides is significantly improved. We perform FWM measurements for different pump powers, wavelength detuning, GO coating lengths, and number of GO layers. Our experimental results show good agreement with theory, achieving up to ∼9.5-dB enhancement in the FWM conversion efficiency for a 1.5-cm-long waveguide integrated with 2 layers of GO. We show theoretically that for different waveguide geometries an enhancement in FWM efficiency of ∼20 dB can be obtained in the doped silica waveguides and more than 30 dB in silicon nanowires and slot waveguides. This demonstrates the effectiveness of introducing GO films into integrated photonic devices in order to enhance the performance of nonlinear optical processes.
Highlights
All-optical integrated photonic devices offer competitive solutions to achieve on-chip signal processing without the need for complex and inefficient optical-electrical-optical (O-E-O) conversion.[1]
We report significantly improved Four wave mixing (FWM) performance for high-index doped silica glass waveguides by integrating them with graphene oxide (GO) films
We perform FWM measurements in doped silica waveguides integrated with thin GO films
Summary
All-optical integrated photonic devices offer competitive solutions to achieve on-chip signal processing without the need for complex and inefficient optical-electrical-optical (O-E-O) conversion.[1]. As compared with graphene, GO has much lower loss and larger bandgap (2.4–3.1 eV)[36,37] which yields low TPA in the telecommunications band It offers better capability for large-scale fabrication,[38] critical for the practical implementation of high-performance nonlinear photonic devices. We show theoretically that by optimizing the device parameters for the low index contrast waveguides studied here, an enhancement in the FWM efficiency of ∼20 dB is possible, and for silicon nanowires and slot waveguides (SWGs), more than 30 dB enhancement is achievable. These results confirm the improved FWM performance of integrated photonic devices incorporated with GO
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