Abstract
Quantitative evaluation of crystal defects introduced by fast atom beam (FAB) treatment was developed for surface-activated wafer bonding. The surface of n-GaAs was treated with the FAB using Ne, Ar and Kr, and Au Schottky electrodes were formed on the surfaces. Capacitance of a Schottky diode as a function of both probe frequency and DC bias allowed us to characterize both energy depth of the defects and their density profile along the physical depth from the GaAs surface. The results indicated that atoms with the smaller diameter generate high-density defects to the deeper region from the surface. When the defect density exceeding the doping level of GaAs spreads to wider than 5 nm, significant Schottky characteristics appeared in the interfacial current-voltage characteristics, as suggested by simulations. Such a tendency was semi-quantitatively in good agreement with the measured current-voltage characteristics.
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