Invited: Analysis and Detection of Dislocations in GaN

Abstract

Etching, X-ray topography, cathodoluminescence, and transmission electron microscopy were demonstrated as the methods to detect and categorize dislocations in GaN. Etching and X-ray topography can categorize them with the magnitude and direction of Burgers vector, respectively. One of the TEM technique i.e. large angle convergent beam diffraction can accurately determine the magnitude and direction of Burgers vector. Complex dislocations were discriminated from single dislocations by cathodoluminescence.