Abstract
We succeeded in applying electron-beam-induced current (EBIC) technique to visualize the current leakage sites in the MOS devices with HfSiON gate dielectrics. The occurrence of initial leakage sites in fresh devices has been investigated with consideration of the effects of well type, gate size and gate electrode. Stress-induced leakage and breakdown sites were studied by in situ voltage stress and EBIC characterization. Finally, the micro-structure and physical damages at various leakage sites were characterized by TEM. Based on the EBIC and TEM results, the leakage and breakdown mechanisms of HfSiON gate stacks were discussed.
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