Abstract
All-chemical vapor deposited silicon nitride / monolayer graphene TFTs have been fabricated. Polychromatic Raman spectroscopy shows high quality monolayer graphene channels with uniform coverage and significant interfacial doping at the source-drain contacts. Nominal mobilities of approximately 1900 cm2V-1s-1 have been measured opening up a potentially useful platform for analogue and RFR-based applications fabricated through all-chemical vapor deposition processes.
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