Abstract
Hall bar-shaped field-effect transistors (HB-FETs) are excellent devices for comprehensive, large-scale testing of Si/SiGe heterostructures in spin qubit applications. In this paper, we detail the process integration of high-quality HB-FETs onto Si/SiGe heterostructures within the IHP 200 mm BiCMOS pilot line. We compare various SiO2 deposition techniques to identify the most suitable process for a low thermal budget gate dielectric. The integration of HB-FETs on Si/SiGe heterostructures is discussed with a focus on the contact implant. We demonstrate the functionality of the devices at room temperature and at cryogenic temperatures. Magnetotransport measurements reveal a maximum electron mobility exceeding 300,000 cm²/Vs at 1.5 K.
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