Abstract
There are many different ALD reactor designs and configurations supporting the semiconductor industry. These designs include temporal and spatial pulse/purge separation, thermal versus plasma enhanced, and single wafer versus batch reactor designs. Gas and precursor delivery designs are varied as well including cross flow versus showerhead, solid source versus liquid source, vapor draw/bubbling versus injector/vaporizer. These designs were developed based on meeting a particular film or application or process and film metric requirement (step coverage, throughput, particle performance, etc.). The intent of this paper is to review, compare and contrast these designs and applications relative to different design combinations. The data presented will be from our AIXTRON high performance mini-batch QXP-8300. This tool is configured with a showerhead integrated with a vaporizer delivery system specifically designed for low vapor pressure precursors. A typical temporal design, QXP-8300 is a multi-wafer ALD system with a small volume confined process space. We will also be citing examples in the literature on spatial and other temporal thermal and plasma ALD configurations. An analysis of film performance and CoO comparison will also be presented.
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