Abstract
A bottleneck for achieving Ge-CMOS is the Fermi-level pinning (FLP) phenomenon, which causes high electron barrier height (ΦBN) for metal/Ge contacts, resulting in an increase in contact resistivity (ρ C) between metal and n+-source/drain in n-MOSFET. We have found that the low ΦBN can be realized by directly sputtered TiN/Ge and ZrN/Ge contacts, which is induced by amorphous interlayer (a-IL) formed during the sputter deposition. In this paper, we present that the a-IL in the ZrN/Ge contact can be retained on Ge surface, which enables us to fabricate metal/a-IL/Ge contacts with different metals. We investigated the electrical properties of metal/a-IL/Ge and metal/a-IL/n+-Ge contacts and showed that the a-IL remarkably modulate the ΦBN and ρ C. As a result, we succeeded in ultralow ρ C for Ag/a-IL/n+-Ge with post metallization annealing at 400°C, which was an average ρ C value of 2×10-7 Ω·cm2.
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