Abstract
The Time Dependent Dielectric Breakdown mechanisms of n/p-FETs having high-k gate dielectrics have been studied through the Weibull distribution. From the thickness dependence of Weibull beta, it is found that the breakdown in n-FETs and p-FETs is mostly determined by the breakdown of high-k layer and interfacial layer (I.L.), respectively. Furthermore, Weibull beta in p-FETs is found to be independent of the injected carrier ratio (Jhole/Jelectron) while those in n-FETs strongly depend on this ratio. Improvement of Weibull beta through the control of the injected carrier ratio together with metal gate application leads to extremely longer lifetime in n-FETs. Improvement of average Tbd through the control of hydrogen concentration in high-k leads to longer life time also in p-FETs.
Published Version
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