Abstract
We describe a new flexible material that functions as a gate dielectric of amorphous-silicon thin-film transistors, as a passivation layer for plastic substrates, and as an environmental barrier for organic light-emitting diodes. The material is SiO2 with some silicone polymer character. It is deposited, typically at room temperature, from a glow discharge in which a silicone precursor molecule, hexamethyl disiloxane, is oxidized. Films of the material can be made with a broad range of properties, which vary from those of SiO2 to those of plasma-polymerized silicone. Many macroscopic properties of these films suggest that they are homogeneous. We call the films "hybrid."
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