Abstract
High permittivity (high-k) dielectric films are of considerable interest as gate oxide materials in advanced complementary metal-oxide-semiconductor (CMOS), in metal-insulator-metal capacitors (MIM), and in dynamic and resistive random access memory devices as well. These materials need to be characterized and qualified prior to their inclusion on massive fabrication processes. In this work we review the standard and new electrical characterization techniques available in our laboratory for the electrical characterization of thin high-k layer-based metal-insulator-semiconductor (MIS) and metal-insulator-metal structures. All of them constitute a complete suite of experimental techniques to carry out an in-depth study of conventional and incoming high-k based devices.
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