(Invited) A Comparison of Device Architecture, Electrical Performance and Process Flow between FinFET and Planar MOSFETs

Abstract

In this paper, we compared the device architecture, electrical performance between bulk planar, SegFET, UTBB-SOI and FinFET MOSFETs based on TCAD simulation and we also listed the key fabrication process difference between bulk planar and FinFET devices. Results show that FinFET has best short channel effect (SCE) immunity due to its double gate structure. Hence, FinFET device demonstrates best DC performance, which includes Ion/Ioff, Sub-threshold Swing and DIBL. Analyses also show FinFET has best AC performance: smallest delay and dynamic power consumption. Besides some 20nm technology node’s processes, some brand new processes, such as Fin formation, low-k spacer, poly and HK/MG CMP, SiC/SiGe in-situ doping with Ti-silicide and SAC local interconnects, need to be introduced into the FinFET process flow as a necessary cost of achieving the superior performance.