Abstract
This paper explores the possibility of Atomic Layer Deposition (ALD) of polycrystalline GaN thin films in a purely thermal mode from trimethylgallium (TMG) and ammonia (NH3) precursors, at a temperature as low as 400 °C, without any additional activation, e.g., by a plasma. In order to achieve this, the so-called adduct chemical pathway, prevalent in GaN Metal Organic Chemical Vapor Deposition (MOCVD), was realized within an ALD scheme. Based on the known existence of the TMG:NH3 adduct in gas-phase, here we hypothesize the occurrence of an analogous TMG:NH3 surface adduct, and thereby propose a model for the growth of GaN via surface reactions occurring in a self-limiting manner. We show that such surface reactions are possible even at 400 °C, and result in polycrystalline GaN films with a reasonable growth rate of 0.045 nm/cycle. The proposed purely thermal low-temperature deposition approach may increase the versatility of poly-GaN films in several new applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
