Abstract
Directly measured unsaturated gain spectra of GaAs-GaAlAs double heterostructure wafers at above-threshold conditions are reported for different temperatures. Maximum gain values are in the order of 100 cm−1 for room temperature and up to 1000 cm−1 for liquid helium bath temperature. Best fit of the gain spectra is obtained using lineshapes corresponding to band-to-band transitions without validity ofk-selection rule and including tail states. The temperature dependence of the maximum gain agrees with these assumptions.
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