Abstract
Microwave processed Ni1-xMgxFe2O4 with x=0.0–1.0 are characterized fordc,ac conductivities and dielectric properties as a function of temperature and frequency. Very low dielectric loss tangent is achieved at 5MHz frequency. Grain and grain boundary contribution towards conductivity is presented on the basis of Nyquist plots and their resistances are evaluated from semi-circular arcs. Equivalent electrical circuits and approximate R-C values are presented for better insight. High dielectric constant of 41 for x=0.8 sample instigated the possibility of good electromagnetic absorption material. A shift in the transport phenomenon is suggested from band like to polaron hopping with rise in temperature.In addition the electromagnetic interference shielding properties are studied in X-band.The results show that the goodelectromagnetic interference shielding efficiency is achieved for x=0.4−0.6 compositions ranging from 10 to 17dB (at 8.4GHz) which is suitable for shielding application.
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