Abstract
AbstractIntermittent Gd‐doping into InGaN has been attempted to obtain improved crystalline quality of the InGaGdN samples for spintronic device applications. Intermittently Gd‐doped InGaN samples with different layer thickness of the intercepting‐ undoped InGaN layers have been grown by the electron cyclotron resonance plasma‐excited molecular‐beam epitaxy (ECR‐MBE) technique and their structural and magnetic properties were studied. The incorporation of Gd by this intermittent doping method was confirmed by the X‐ray fine structure (XAFS) analysis. The rocking curves and the reciprocal space maps (RSM) of these samples revealed that under certain growth parameters, they exhibited formation of superlattice like structure. The superconducting quantum interference device magnetometer (SQUID) measurements revealed that they show room temperature ferromagnetism (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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