Abstract
Indium sulphide (In2S3) is a versatile material having applications in optoelectronics and photovoltaics, whose properties could be tailored by incorporation or doping. We report incorporation of graphene in indium sulphide (In2S3-Gr) thin films by two step process. The pure samples are synthesized by chemical bath deposition. Incorporation of graphene in these thin films is done by spin coating followed by annealing. Structural analyses of pure and In2S3-Gr thin films are carried out by using Grazing Incidence X-Ray Diffraction, Field Emission Scanning Electron Microscopy, X-ray Photoelectron Spectroscopy and Raman spectroscopy. In this work, investigations on electrical, thermal and optical properties of In2S3-Gr thin films are also conducted. The systematic characterisations revealed that In2S3-Gr nanocomposite thin films are synthesized by this process. Also, the samples showed significant modifications in its structural and optoelectronic properties by incorporation of graphene. In2S3-Gr thin films prepared could be useful in various optoelectronic devices including photovoltaics and as a photocatalyst.
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