Abstract
CdSe x Te 1− x (0 ≤ x ≤ 1) compound has been prepared by direct reaction of elemental cadmium, selenium and tellurium and thin films of CdSe x Te 1− x have been deposited onto well-cleaned glass substrates by hot wall deposition technique. CdSe x Te 1− x thin films have been deposited using a hot wall arrangement consisting of a quartz tube of 6.5 cm length and 1 cm diameter. The composition of the deposited films has been identified using energy dispersive analysis of X-rays. X-ray diffraction studies revealed that the prepared CdSe x Te 1− x bulk and deposited thin films are polycrystalline in nature with cubic zinc blende or hexagonal structure or both depending on the composition. CdSe x Te 1− x was found to exhibit a structural phase transition as a function of composition. The micro-structural parameters such as grain size, dislocation density and strain have been evaluated and their thickness dependence has been analysed. Photoluminescence spectra of the deposited films have been studied.
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