Abstract
Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrate using DC reactive magnetron sputtering method. The thin films were deposited at room temperature and post-annealed at 200 oCfrom 15 to 90min. The period of post-annealing treatment on structural, electrical and optical properties of ZAO thin films were investigated. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) are used to study the morphology and topography of the films. The grain size obtained from FESEM images of ZAO thin films are found to be in the range of 20 – 26nm. The minimum resistivity of 1.74 x 10-4Ω.cm and an average transmittance of 92% are obtained for the thin film post- annealed for 30min. All ZAO films exhibit an average optical transmittance of > 85% in visible region. The optical band gap of ZAO thin films increased from 3.49 to 3.60eV with increase of post-annealing time due to Burstein-Moss effect. The optical constants such as refractive index (n), extinction coefficient (k) and absorption coefficient (α) were determined from the optical transmission spectra.
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