Investigations on non-stoichiometric zirconium nitrides

Abstract

Non-stoichiometric zirconium nitride thin films were prepared by reactive dc magnetron sputtering. Structural, optical and electrical properties were investigated with respect to nitrogen gas flow. The film characterization was obtained through various techniques: Rutherford back scattering (RBS), X-ray diffraction (XRD), reflectometry and a four probe method. We found that the deposition rate decreases while the nitrogen flow increases. Also it was shown that a stoichiometric compound (ZrN) is formed at a 4 sccm nitrogen flow. It has a rock-salt structure and presents a minimum of resistivity and a gold-like color. As nitrogen flow increases, films become more and more amorphous, semi-transparent and electrically resistive. Furthermore, at a nitrogen flow of 9 sccm, the nitrogen to zirconium atomic concentration ratio is near 1.33 and the film exhibits properties close to those of a Zr 3N 4 phase.