Abstract
GaInNAsSb quantum wells grown by molecular-beam epitaxy on GaAs substrates were investigated. Intricate incorporation mechanisms of the constituents in this quinary alloy were seen. In highly strained indium-rich alloys, antimony incorporation is strongly reduced, and a beneficial surfactant effect is observed. Due to this effect, high structural quality is preserved even for an uncompensated 2.67% strained multiquantum-well structure. Narrow luminescence linewidth (35 meV) could be achieved near 1.55 μm wavelength with these quantum wells. Laser emission is demonstrated at 1.50 μm with threshold current density of 3.5 kA/cm2.
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