Abstract
In this work, we investigate the impact of Si doped AlGaN quantum barriers on the optical powers for [0001] oriented III‐nitride based deep‐ultraviolet light‐emitting diodes (DUV LEDs). The polarization‐induced electric field in the active region is screened as the result of Si‐doped quantum barriers, which gives rise to the improved spatial overlap between electron and hole wave functions. The polarization screening effect within the quantum wells is further proven by the observation of the blue shift for the wavelength. However, the hole distribution across the active region can be significantly retarded if the Si dosage in the quantum barriers is too high. Therefore, the improved radiative recombination within the active region can be realized provided that the Si dosage in the quantum barriers is moderately adjusted to guarantee both the better hole injection efficiency and the screened polarization effect in the multiple quantum wells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: physica status solidi (RRL) – Rapid Research Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
