Abstract
The analysis of temperature and time dependence of the Ti film microstructure evolution in Ti/Si thin films indicates Si diffusion occurs before any crystal phase is formed. Diffusion occurs first in Ti grain boundaries and then, within the grains. Ti5Si3 has been identified as a transient phase forming before C49 TiSi2 grows. Ti5Si3 only grows in isothermal runs in a narrow range of annealing temperatures (412–434 °C in our study). It has not been observed in temperature runs in which C49 TiSi2 forms. The mechanisms of Ti5Si3 formation and transformation into C49 have been found to be diffusion limited. Phases of alloyed Ti, amorphous silicide, Ti5Si3, and C49 TiSi2 have been simultaneously observed. The lifetime and the volume fraction of the initial metal layer transformed into Ti5Si3 are naturally tightly temperature dependent.
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