Abstract
The use of gallane-quinuclidine adduct as a chemical precursor in metalorganic molecular beam epitaxy (MOMBE) growth has been investigated. The compound displays a long term stability and can be readily admitted as a molecular beam into the growth chamber without significant decomposition. The surface decomposition pathway of the precursor on the growth surface is similar to that of the highly successful alane adduct precursors already in widespread use. Efficient MOMBE growth of GaAs is observed at much lower temperatures than is the case when conventional Ga alkyl precursors are employed. These results show that gallane adducts may have the potential to act as practical low carbon precursors in chemical beam epitaxy (CBE) and MOMBE.
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