Abstract
A comprehensive room-temperature study of the electron tunneling in the STM junction between a tungsten tip and a highly oriented pyrolitic graphite surface is presented. The conductance versus voltage dependencies d I= dV.V/ ob- tained by numerical filtration and differentiation of the direct measured current - voltage characteristics I.V/ have a num- ber of narrow resistive peaks at the bias voltages located near the corresponding tungsten and HOPG phonon frequen- cies. The plotted histograms of the frequency distribution of the global minimum in d I= dV.V/ curves enable us to draw a conclusion on the phonon origin of this fine structure. A model that could qualitatively explain the observed data is discussed.
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