Abstract
The fabrication of thin silicon films for microwave semiconductor devices is investigated using polishing and etching methods. With the described bubble etching method the thickness of the Si film can be monitored during etching. Si‐films with a thickness down to 3 μm could be fabricated with this process. The etched films are free of strain and etch pits and are sufficiently plane parallel as required by microwave transit devices. The fabrication of an MnM Baritt diode and a double diffused Impatt diode without substrate is given as example.
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