Abstract
The conductivity mechanisms in polycrystalline CuInSe2 and the ordered vacancy compounds CuIn3Se5, CuIn5Se8 and CuIn7Se12 were studied by low temperature conductivity measurements and room temperature Hall and photoconductivity measurements. The polycrystalline films were structurally, morphologically and compositionally characterized using x-ray diffraction, atomic force microscopy and energy dispersive analysis by x-rays, respectively. In general, the films showed Mott's variable range hopping conduction in the temperature range below 200 K while above 200 K thermally activated conductivity due to grain boundary effects and defect levels was observed. To investigate the reason for the metallic behaviour shown by Cu-rich films, the films were etched and the change in behaviour was studied.
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