Abstract
In this study, we investigate the effect of fluorine (F[Formula: see text] flow rate on the crystal characteristics and chemical bonds of Al-Doped ZnO (AFZO) Films. At first, 1 wt% Al2O3was mixed with 99 wt% ZnO to form the Al-doped ZnO ceramic target, the radio frequency (RF) magnetron sputtering method was used to deposit the AFZO films by introducing different flow rates of F2gas using F2/(Ar + F2) mixing atmosphere during the deposition process. F2flow rates (F2/(Ar + F2)) were changed in the range of [Formula: see text]%, and F2ratio was controlled using the mixing gases of (F2(5%) + 95% Ar) and pure Ar. AFZO films were deposited on the EagleXG glass and the films’ thickness was about 330 nm by controlling the deposition time. After AFZO films were deposited, their crystalline structure and electrical characteristics were well investigated. Finally, a comparative study of surfaces of AFZO films was investigated using X-ray photoelectron spectroscopy (XPS) to find the variations of the chemical bonds as the deposition temperature and F2flow rate were changed.
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