Abstract
The electrochemical porous etching of n-InP in 1 M HCl has been investigated by monitoring the mass of In3 + released during and after the anodic polarization. The study has been performed on both crystal-oriented (CO) and current line-oriented (CLO) pores grown at 10 mA · cm− 2 and 5 V vs Ag/AgCl. An unexpected evolution of the mass of In3 + has been measured when the electrochemical dissolution process is stopped. It indicates a mass loss more than twice higher after 2 or 3 hours. This demonstrates that the accurate amount of dissolved InP must be considered a longtime after the end of the polarization. The comparisons of the etched masses for CO and CLO pores with the values calculated from the coulometric charges indicate that the etching processes are similar for the two pore geometries and that the dissolution valence for InP is 2. The chemical analyses, performed by X-ray photoelectron spectroscopy, reveal that the main corrosion products are Cl-containing compounds such as InCl3. This gives valuable information to confirm an InP porous etching mechanism proposed earlier in literature.
Highlights
After the comparison of the atomic absorption spectroscopy (AAS) results achieved on CO and current line oriented-pores (CLO) pores, the chemical composition of the porous layer
The current line oriented-pores (CLO) pore morphology is formed under stronger anodic polarizations
The dissolution valence of InP has been successfully determined from chemical analyses of the dissolved species using atomic absorption spectroscopy (AAS)
Summary
After the comparison of the AAS results achieved on CO and CLO pores, the chemical composition of the porous layer The chemical composition of the InP surface was analyzed by XPS before (reference) and after the porous etching. This discrepancy can be explained either by a higher porosity ( p) in the CLO pores or by two different etching processes.
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