Abstract
This paper develops a comprehensive set of theoretical equations to simulate the 1/fγ noise spectrum and volt–ampere (I–V) characteristic curve of an n-type InGaAs metal–semiconductor field-effect transistor (MESFET) device. Two methods are proposed for establishing the corner frequency of the noise spectrum. The correlation between the surface state, noise spectrum, gate bias, drain bias, corner frequency and threshold voltage of the MESFET device is established based on simulation and experimental data. The good agreement observed between the simulation and experimental results confirms the validity of the theoretical predictions for the noise spectrum and I–V characteristic curve of the current MESFET device.
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