Abstract
The results of pilot studies of silicon shock-ionized dynistors (SIDs), which belong to the class of thyristor-type semiconductor devices that are able to be switched to a highly conducting state within a time shorter than 1 ns upon application of a short overvoltage pulse that initiates an impact-ionization process, are presented. The excellent characteristics of SIDs in the mode of switching high-power current pulses of nanosecond duration are demonstrated. Experiments are described that indirectly confirm the ability to initiate the process of subnanosecond switching of an SID by holes that are injected from a p+ emitter.
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