Investigations of PbSe layers after anodic electrochemical etching by scanning electron microscopy

Abstract

AbstractInvestigations of the morphology of the surface of PbSe/CaF2/Si(111) epitaxial structures after anodic electrochemical etching in a Norr electrolyte with anodizing current density of 2‐8 mA/cm2 and duration of 10‐20 min were performed. Two possible morphology types of PbSe nanostructured surficial porous layers were distinguished. Agglomerated nanoislands with 80‐400 nm lateral sizes and 70 nm average separating gaps were observed for the anodized films with initial flat terraced surface. It is shown that in this case it is possible to fabricate PbSe agglomerated nanoisland structures directly on silicon substrate. A double‐layered porous structure was obtained for epitaxial PbSe films with initial granular surface. Top porous layer with a thickness of 75‐100 nm presents a developed hierarchical porous network. Bottom layer is characterized with a presence of mesopores with 7‐18 nm diameter propagating into the layer. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)