Investigations of lattice location and mobility of carbon in GaAs using the channeling technique

Abstract

In order to get information about the lattice location and the mobility of 12C in GaAs wafers, the channeling technique in combination with nuclear reaction analysis (NRA) is a powerful method. The targets were implanted with 12C ions (2.6 × 10 13−2.6 × 10 15cm −2) at energies between 60 and 3000 keV. This corresponds to implantation depths of about 0.1 to 3 μm. Using the nuclear reaction 12C(d, p) 13C a depth distribution of the implanted carbon is obtained. The relationship between the concentration of 14C in random and along the 〈100〉 and 〈110〉 axial directions gives information about the substitutional lattice location of carbon within the GaAs crystal. In addition, we measured lattice defect depth distributions with a 1.5 MeV 4He + beam before and after thermal annealing at temperatures up to 600°C.