Abstract
200 keV Fe + ions were implanted into silicon at 350°C to investigate the phase formation of α-, β-FeSi 2 and ϵ-FeSi. Doses of 1, 3, 5, and 7 × 10 17 cm −2 were used to produce different silicides. Subsequent annealing of three samples (1, 3, and 7 × 10 17 cm −2) at 1150°C for 30 s leads to phase transitions and changes of the silicide fractions. The sample implanted with 5 × 10 17 cm −2 Fe was irradiated with 3 MeV Si at room temperature, and shows significant changes in the phase composition, too. Conversion electron Mössbauer spectroscopy, Auger electron spectroscopy sputter depth profiling, Rutherford backscattering spectroscopy and X-ray diffraction were used for sample characterization. The results of the different methods, which have different depth sensitivities are combined and compared to each other. The results are discussed with respect to the different processes which take place during implantation, annealing and post irradiation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.