Abstract
200 keV Fe + ions were implanted into silicon at 350°C to investigate the phase formation of α-, β-FeSi 2 and ϵ-FeSi. Doses of 1, 3, 5, and 7 × 10 17 cm −2 were used to produce different silicides. Subsequent annealing of three samples (1, 3, and 7 × 10 17 cm −2) at 1150°C for 30 s leads to phase transitions and changes of the silicide fractions. The sample implanted with 5 × 10 17 cm −2 Fe was irradiated with 3 MeV Si at room temperature, and shows significant changes in the phase composition, too. Conversion electron Mössbauer spectroscopy, Auger electron spectroscopy sputter depth profiling, Rutherford backscattering spectroscopy and X-ray diffraction were used for sample characterization. The results of the different methods, which have different depth sensitivities are combined and compared to each other. The results are discussed with respect to the different processes which take place during implantation, annealing and post irradiation.
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