Abstract
Conductive properties of film ferroelectric/dielectric heterostructures on MgO substrate in the wide temperature range were studied. The conditions influencing the occurrence of highly conductive layer at the interface of the Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3/MgO heterostructure were considered. The effect of visible light irradiation on the electrical resistance of highly conductive layer at the heterointerfaces in Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3/MgO and LaMnO3/Bi4Ti3O12/Ba0.4Sr0.6TiO3/MgO was observed. When exposed to light, an immediate increase in the resistance of a heterostructure occurred with full recovery in the dark state. A possible mechanism for this phenomenon was discussed.
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