Abstract
The influence of gold in the Si/SiO 2 system has been studied both theoretically and experimentally. The gold is found to introduce two regions of shallow acceptor surface state energy levels in the silicon band gap at the SiSiO 2 interface: one at 0.09 eV from the valence band edge and the other at 0.13 eV from the conduction band edge. It is tentatively postulated that both the surface state energy levels are due to gold atoms in substitutional sites. The two deep normal bulk gold energy levels in silicon do not seem to occur at the SiSiO 2 interface. Finally a model of gold diffusion is suggested, and gold is found to diffuse through the bulk silicon by a complex interstitial and substitutional mechanism.
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