Abstract
In this work we will focus first on obtain the sheet resistance, Rs of thin film whose surface thickness is equal to 1000 nm for the chalcogine Ge20Sb20Te60 at different heating rates , this is done against temperature in the range from 70 to 370 °C. The sheet resistance curve and through derivation of sheet resistance as a function of temperature there was clearly evidence of two crystallization regions for the studied sample. Second, the thermal data we obtained was used to complete the thermal calculations and then the electrical calculations thereafter. The activation energies of crystallization were evaluated by kinetic criteria. The activation energy, Ec , and Avrami index, n, were obtained by analyzing the data via JMA methods. The results indicated that the transformation from amorphous to crystalline phases. The crystalline phases for the as-deposited and annealed film were identified via x-ray diffraction (XRD).
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